Here are the results of the pre and post chamber clean etches in stsetch;
Pre Clean;
Wafer 1 avr ER Si = 2.12um/min, avr ER PR = 296A/min, selectivity Si : PR = 72 :1
Wafer 2 avr ER Si = 1.91um/min, avr ER PR = 245A/min, selectivity Si : PR = 80 :1
Post Clean;
Wafer 1 avr ER Si = 1.97um/min, avr ER PR = 293A/min, selectivity Si : PR = 67 :1
Wafer 2 avr ER Si = 2.21um/min, avr ER PR = 323A/min, selectivity Si : PR = 68 :1
Uniformity improved somewhat after the clean.
All data available, just ask.
Subscribe to:
Post Comments (Atom)
No comments:
Post a Comment