Reinstalled the electrode teflon spacers (pips). Adjusted the He bypas flow and also adjusted the He flow restriction valve to the chamber. Here are the helium flows after the adjustments. The actual values are 10x the panel readout.
Bypass flow = 1.05 (wafer loaded and before the process begins)
without wafer = 2.72 (during process)
bare Si wafer = 1.55 (during process)
bare Si wafer on carrier = 1.95 (during process)
So the worst case flow (no wafer) is about 17 sccm. A bare Si wafer leaks 5 sccm. An Si wafer on a carrier leaks 9 sccm.
Nancy is running a qual now.
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