Several wafers were run this week in an effort to track down the report of increased resist etch rates. Here are the er's, selectivities and etch times;
8/18 10 mins, Si = 1.93um, PR = 140A, 138 : 1
8/18 10 mins, Si = 1.98um, PR = 119A, 166 : 1
8/19 10 mins, Si = 1.68um, PR 192A, 88 : 1
8/19 60 mins, Si = 1.7um, PR = 144A, 118 : 1
8/19 10 mins, Si = 1.57um, PR = 145A, 108 : 1
8/20 60 mins, Si = 1.48um, PR = 151A, 98 : 1
We need to figure out why the Si er's are decreasing.
Friday, August 20, 2010
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