Ran 20 min DEEP conditioning, then 4 wafers of DEEP for 10 mins;
Wf #1 Si ER = 1.67um/min, PR ER = 246A/min, Sel = 68 : 1
Af #2 Si ER = 1.63um/min, PR ER = 258A/min, Sel = 63 : 1
Wf #3 Si ER = 1.67um/min, PR ER = 246A/min, Sel = 68 : 1
Wf #4 Si ER = 1.67um/min, PR ER = 236A/min, Sel = 71 : 1
Si ER is less than expected. Note chamber pressures will be lower, too.
Wednesday, October 13, 2010
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