Comment stsetch SNF 2011-01-12 17:40:38: Quals after shutdown

O2CLEAN run for 20 min, DEEP run for 30 min for seasoning
Three wafersrun for 10 min, DEEP, with the following results;
1 Si ER = 2.0um/min, PR ER = 85A, Sel Si : PR = 235 : 1
2 Si ER = 2.0um/min, PR ER = 73A, Sel Si : PR = 274 : 1
3 Si ER = 1.96um/min, PR ER = 69A, Sel Si : PR = 284 : 1
One wafer was run for 60 min, DEEP-
Si ER = 1.75um/min, PR ER = 171A, Sel Si : PR = 102 : 1
Not sure why the PR ER is so slow for the 10 min etches or why the longer etch yields lower ER's.