Used 7 um spr 220-7 resist as mask. After 4 hours baking at 110C. Ran one wafer with deep_smooth for 2 hours, and another wafer with fastdeep for 2 hours. Used wafer holder on both wafers. Gas flow rates were consistent with previous runs.
Both wafers had PR completely burned off after approx. 1.5 hours of etching.
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