STSetch Email Log

[Reminder] MSE PhD Dissertation Defense: Marika Gunji (Tomorrow, 2PM)

2012-01-29T15:55:00.001-08:00

Nanostructured SiGe and Ge for Future Electronic Devices

Marika Gunji

Department of Materials Science and Engineering

Advisor: Prof. Paul C. McIntyre

Monday January 30^th 2012, 2PM (Refreshments at 1:45PM)

Location: CIS-X 101 Allen Auditorium
(http://cis.stanford.edu/directions/)

As the packing density of silicon (Si) integrated circuits (IC) increases, scaling requirements are becoming severe. Two approaches are considered to be effective to continue dimensional scaling. One is to alter the device layer so that it is a semiconductor other than silicon. Silicon-germanium (SiGe) and germanium (Ge) are suitable candidates because of their greater carrier mobilities than Si and their process compatibility with Si substrates. Another approach is to change the device or circuit structures so that there is less power consumption and better performance for higher device packing densities in ICs. Nanoscale structures such as ultra-thin semiconductor-on-insulators or nanowires can be incorporated in future transistors.

The presentation will focus initially on synthesis of highly compressively strained SiGe-on-insulator (SGOI) substrate fabrication. The strain relaxation mechanisms in highly compressively-strained (0.67% ~ 2.33% biaxial strain), thin SGOI structures with Ge atomic fraction ranging from 0.18 to 0.81 will be described. SGOI layers (8.7 nm ~ 75 nm thickness) were fabricated by selective oxidization of Si from compressively strained SiGe films epitaxially grown on single crystalline Si-on-insulator (SOI) layers. After high temperature oxidation annealing, ~ 30% of the observed strain relaxation can be attributed to formation of intrinsic SFs and the remaining strain relaxation to stress-driven buckling of the SiGe layers.

The presentation will also discuss the path to obtain higher-k dielectrics on Ge metal-oxide-semiconductor (MOS) devices. To obtain high gate capacitance density dielectrics on high-mobility Ge channels, one solution is to interpose a large energy band gap (E_g) insulator with moderate k as an interface layer between a higher-k dielectric and the channel, since higher-k dielectrics tend to have small E_g. Al₂O₃ layers (k ~ 8) can have stable interfaces with Ge and a large band gap. On the other hand, TiO₂ can achieve a much higher k value (~ 60) when in the rutile crystalline phase, but its conduction band offset with Ge is less than 1 eV. TiO₂/Al₂O₃ bilayers deposited on Ge(100) by ALD can achieve low interface trap density with small leakage current after post-metal forming gas anneal. From measurements performed on MOS capacitors, the maximum capacitance at a given frequency increases after the 450 °C forming gas anneal, indicating that the dielectric constant of TiO₂ increased to ~50 after annealing. Consistent with these results, TEM datae indicate that the ALD-grown TiO₂ phase had predominantly transformed to the rutile phase after annealing.

In order to measure the channel transfer characteristics for this TiO₂ (7.5 nm)/Al₂O₃ (2.5 nm)/Ge(100) stack, pMOSFETs with long channels (L_g = 2 – 30 um) were fabricated. The devices show a subthreshold swing of 115 mV/dec and an on-state current of 60 mA/mm. Measured peak hole mobility reaches 370 cm²/Vs, which suggests the feasibility and potential of TiO₂/Al₂O₃/Ge gate stacks for high performance MOSFETs.

--
---------------------------------
Marika Gunji

PhD Candidate
McIntyre Group
Department of Materials Science and Engineering
Stanford University
E-mail: gunjim@stanford.edu

--
---------------------------------
Marika Gunji

PhD Candidate
McIntyre Group
Department of Materials Science and Engineering
Stanford University
E-mail: gunjim@stanford.edu

SNF Renovation Update

2012-01-27T18:34:00.001-08:00

Dear Labmembers --

After 6 weeks of extended shutdown and construction, we are very pleased to report that the renovation is going extremely well. The construction crew is knowledgeable, professional, and know our concerns -- they worked extra shifts and weekends to help us minimize the shutdown time and impact to labmembers' research. Main construction work is done and has passed most of the inspections with the County.

There are, however, still a few inspections outstanding, so until these are done, we won't have a definite date as to when the lab will be reopened for use. We will keep everyone posted as we get more information. Please check out the behind-the-scenes photos of the construction, links on the SNF website (see News links.)

Your SNF staff

--  Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA  94305 (650)723-9980 mtang@stanford.edu http://snf.stanford.edu

Seminar - Dr. Paul J. Hung, CellASIC Corporation

2012-01-26T13:40:00.001-08:00

Hi all,

Interesting seminar next Tuesday, January 31, 4-5pm @ Allen 101X Auditorium.

Speaker: Dr. Paul J. Hung, CellASIC Corporation

Topic: Polymer MEMS for Cell-based Microphysiological Platform

Abstract:

In the post-‐genomic era, the next waves of innovation has centered on understanding and utilizing living cells. Physiologic cells are 3D individuals receiving dynamic cues from their perspective microenvironment in order to perform properly; however, current cell-‐based studies are dominantly conducted on static 2D format, leaving a large gap between research findings and clinical applications. Polymer Micro-‐Electrical-‐Mechanical Systems (MEMS) could potentially bridge the gap by providing a more clinically relevant platform to manipulate living cells. Polymer has attractive properties such as biocompatibility, gas permeability, and well-‐ understood surface chemistry. MEMS offer the ability to probe into the time and geometric scale similar to those found in the physiologic cellular microenvironments. The established manufacturing infrastructure further reduces the level of resource investment in project development. In this talk, I will first define the roles for each component of Polymer MEMS in creating cell-‐based microphysiological platforms. A systematic method to design physiologic-‐ relevant cell-‐based circuitry will then be presented. Robust manufacturing processes to implement the design on a user-‐friendly format will be discussed. A toxicity and metabolism screening platform capable of maintaining metabolic functions of liver cells for over 4 weeks will be used as an example. Finally, potential applications of Polymer MEMS for personalized cell diagnosis and therapy will be mentioned.

Short Bio:

Paul J Hung co-‐founded CellASIC Corporation in 2005 to develop and commercialize advanced cell-‐based platforms with Polymer MEMS technology. He received his B.S. degree in Electrical Engineering from National Taiwan University in 1999, and Ph.D. from University of California at Berkeley in Electrical Engineering in 2005. Dr. Hung's research interests include polymer MEMS, biosensors, and platform engineering with the aims to develop the next generation bio-‐ instrumentation, as well as personalized biomedical devices.

Jose Padovani

Graduate Student

Electrical Engineering Department

Stanford University

electrochemical CV measurement

2012-01-24T15:06:00.001-08:00

Hi Labmembers,

Does anyone know where I might be able to do an electrochemical capacitance-voltage profiling measurement? I'm looking to characterize a III-V film on a heavily doped n-type Si substrate.

Thanks,
Angie

Venture Clinic Today, Tuesday, Allen 101, 4 pm

2012-01-24T14:03:00.001-08:00

Dear labmembers --

Thinking about starting up a company while you're waiting for the lab
renovation to end? Shahin Farschi (Lux Capital) and Gavin McCraley
(Morrison Foerster) will be here to host an open discussion and answer
questions about startups. The Venture Clinic will start at 4 pm,
Tuesday, Jan. 24, in Allen 101.

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

MSE PhD Dissertation Defense: Naga Phani Aetukuri - 6th Feb 3pm CIS-X 101

2012-01-23T14:09:00.001-08:00

Department of Materials Science & Engineering

University PhD Dissertation Defense

Electrically-Triggered Metallization in Single-Crystal Vanadium Dioxide Thin Film Heterostructures

Naga Phani Aetukuri

Research Advisor: Professor James Harris

Co-Advisor: Professor Stuart Parkin

Co-Advisor: Professor Paul McIntyre

February 6, 2012 @ 3:00 PM

(Refreshments will be served starting at 2:45 PM)

Location: Paul G. Allen Auditorium (CISX 101)
http://cis.stanford.edu/directions

Vanadium dioxide (VO₂) is metallic at high temperatures but undergoes a metal to insulator transition (MIT) below ~340 K in bulk crystals that is generally attributed to electron-electron correlation effects. This transition can also be engendered by the application of modest electric fields, several orders of magnitude below the electric breakdown field, making this phenomenon potentially useful for two or three terminal switches, depending on its speed and origin.

We have used pulsed laser deposition to prepare epitaxial single-crystalline thin films of VO₂ that show a sharp change in resistance at the MIT for films as thin as 10nm. We find that strain induced by underlying layers can modify the transition temperature of these films. For example, on TiO₂ (001) single-crystal substrates, the transition temperature is reduced to ~290 K, whereas by growing similar films on RuO₂ buffers layers the MIT can be increased up to ~335 K.

A combination of electron-beam and optical lithography was used to fabricate lateral two-terminal nano-devices from VO₂ films deposited directly on TiO₂ substrates. We have observed reversible and reproducible transitions triggered by electric-field but with a delay time varying from as long as 10 ns to as short as 500 ps. The delay time is found to decrease with increasing electric field and temperature. We discuss whether these results indicate the transition is dominated by electronic or by Joule heating effects. In vertical structures with a metallic RuO₂ bottom electrode, we have used a current-sensing atomic force microscope to probe the electric-field-induced MIT in much smaller volumes of VO₂. Reversible switching between insulating and metallic states was observed at modest electric fields for VO₂ layers as thin as 20 nm. These results demonstrate the possibility of triggering an MIT at low voltages and, therefore, at low energies, which is essential for device applications.

Blue Tape

2012-01-21T17:18:00.001-08:00

Hi All,

Does anyone have some blue tape to spare? I can pay you with a modicum of chocolate for your generosity. I would appreciate it if I could have the tape by tomorrow afternoon.

Cheers,

Vijay

(650) 453-8564

Venture Clinic, Tues, 1/24 4 pm, Allen 101

2012-01-19T14:49:00.001-08:00

Dear Labmembers -

Interested in starting a company, joining a startup, or just learning more
about starting, funding, and raising money for fledgling technology
companies? Join VC Clinic where Shahin Farshchi, Principal at Lux Capital
and Gavin McCraley, Of Counsel at law firm Morrison Forrester discuss and
answer questions on mechanics and challenges of creating and growing
technology companies. Venture Clinic will be held at 4PM Tuesday, January
24th in Allen 101.

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Oral Exam Announcement: Soogine Chong

2012-01-18T10:04:00.001-08:00

Stanford University PhD Oral Defense - Department of Electrical Engineering
Title: Design and Fabrication of Nanoelectromechanical (NEM) Relays Integrated with CMOS
Speaker: Soogine Chong
Advisor: Professor H.-S. Philip Wong

Date: Friday, January 20, 2012
Time: 10:00 AM (Refreshments served at 9:45 AM)
Location: Paul G. Allen Auditorium (Formerly CISX-101)

Abstract:
CMOS scaling following Moore's Law has resulted in a dramatic increase in computing power over the decades. This was possible by scaling down the CMOS transistors, both in dimensions and voltage. However, continuous voltage scaling is becoming increasingly difficult because of the increase in subthreshold leakage. This increase is inevitable with threshold voltage scaling, since the subthreshold slope is theoretically limited to be larger than 60 mV/dec. Nanoelectromechanical (NEM) relays are promising devices to overcome this voltage scaling issue because of their sharp on/off transition characteristics and zero off-state leakage. However, these devices have long switching times due to their long mechanical delays. By combining NEM relays with CMOS, it is possible to capitalize on the benefits of each technology.

In this talk, I propose a novel NEM-CMOS SRAM cell design, followed by an experimental demonstration of the fabrication of NEM relays and their integration with CMOS. In the proposed NEM-CMOS SRAM cell, NEM relays replace the pull-down NMOS transistors of a conventional six-transistor CMOS SRAM cell. Simulations show that this hybrid cell has an increased stability and a lower leakage compared to those of a conventional CMOS SRAM cell, without the long mechanical delay of the NEM relay limiting the performance. Despite these advantages, this circuit has not yet been experimentally demonstrated. As an initial step toward the demonstration, I first demonstrate the fabrication of NEM relays without CMOS in two different versions: optically patterned scaled-up devices and e-beam patterned scaled-down devices. With the scaled down devices that have a CMOS-compatible fabrication process, I show an on-chip CMOS inverter successfully driving a NEM relay at the same supply voltage, demonstrating the feasibility of NEM-CMOS integration.

--
Soogine Chong
Stanford University
PhD candidate in Electrical Engineering
e-mail: sgchong@stanford.edu
mobile: +1-650-804-8556

Re: transparent conductive substrate

2012-01-17T19:49:00.001-08:00

Hi Xi,

We used to buy 4" 1mm thick corner glass wafers coated by ITO for
several times in the past. The surface resistance was around 20 ohm/sq.
The vendor was TFD (Thin Film Devices). It's about 5 years passed since
our last purchase, but they are still in business, apparently:
http://www.tfdinc.com/

Good luck,
Sergei

On 1/14/2012 6:19 PM, Xi Xie wrote:
> Hi All,
> I need a transparent conductive substrate/film/cable/tape, something like Si wafer or Copper tape but need to be transparent and have good conductivity. Anyone have any idea anything like that and I can readily buy?
> Also I try to deposite Au on glass slide but the conductivity is low. Any one have better idea of how to do that? Thanks!
>
> Best,
> Xi

kapton tape

2012-01-17T17:19:00.000-08:00

Hi all,

I'm trying to prepare some samples for Tom Carver's lab and need some kapton tape (probably ~20cm). Does anyone have some I could use? It would be greatly appreciated.

Thanks,

Scott

Invitation to Raith / Stanford Advanced Lithography Workshop - February 15, 2012

2012-01-17T17:11:00.001-08:00

Greetings Lab Members and the Raith Ebeam Lithography Community:

I am pleased to announce, and to invite you to join us for an Advanced Nanolithography Workshop. This will be held on Wednesday February 15, 2012 with additional demonstrations and application specific tutorials to be held the following day. You are requested to register using the links below.

Thank you for your support!

James Conway

SwiftpageEmail

Stanford's RAITH150 system has just been upgraded with Raith's unique Fixed Beam Moving Stage (FBMS) capability. In this context, Raith and the Stanford Nanofabrication Facility cordially invite you to attend the Advanced Nanolithography Workshop. This one day workshop will be dedicated to advanced patterning techniques that have been implemented by Raith for both electron and ion beam lithography to enhance nanoscale fabrication beyond traditional vector scan patterning. Please use the link below to automatically register for the workshop. As space is limited, we hope that you can confirm as soon as possible.

When:	Wednesday February 15, 2012
Where:	Allen Building Auditorium (ALLEN 101X), Stanford University
Time:	9:30 AM - 4:00 PM

Click Here to Register

Agenda

9:30 AM - 10:00 AM	Gather, greet and meet over coffee and light snack.
10:00 AM - 11:00 AM	Zero Stitching Error Lithography by Raith Fixed Beam Moving Stage (FBMS) - Part I - For Nanophotonics, Plasmonics, and More Jason E. Sanabia, Ph.D., President & CEO, Raith USA, Inc.
11:00 AM - 12:00 PM	Application of FBMS towards nanophotonics/plasmonics External Guest TBD
12:00 PM - 1:00 PM	Lunch served (soup, sandwiches, salads)
1:00 PM - 2:00 PM	Zero Stitching Error Lithography by Raith Fixed Beam Moving Stage (FBMS) - Part II - Advanced Periodic Patterning Jason E. Sanabia, Ph.D., President & CEO, Raith USA, Inc.
2:00 PM - 3:00 PM	Ion Beam Lithography with Advanced Patterning Modes, Joseph Klingfus, Ph.D., Applications Scientist and Project Manager for the Stanford RAITH150, Raith USA, Inc.
3:00 PM - 4:00 PM	Open discussions

Sent to:jwc@snf.stanford.edu
If you prefer not to receive
future e-mails of this type,
click here

Sent By:

Raith USA, Inc.

2805 Veterans Highway Suite 23

Ronkonkoma New York 11779
United States

To view as a web page click here.

EE PhD Oral Examination -- Kelley Rivoire, Fri. Jan 20, 2 pm, Nano 232

2012-01-17T16:44:00.000-08:00

Stanford University PhD Oral Defense - Department of Electrical Engineering

Title: Nonlinear frequency conversion in III-V semiconductor photonic crystals
Speaker: Kelley Rivoire
Advisor: Jelena Vuckovic

Date: Friday, Jan. 20, 2012
Time: 2 pm (refreshments served at 1:45 pm)
Location: Nano Building, room 232

Abstract:

Nonlinear optical processes provide a physical mechanism for
converting the frequency of light. This allows the generation of
tunable light sources at wavelengths inaccessible with lasers, leading
to a diverse set of applications in fields such as spectroscopy,
sensing, and metrology. To make these processes efficient has
conventionally required relatively exotic materials that are
incompatible with state of the art nanofabrication, resulting in
large-area devices that operate at high optical powers and cannot be
integrated with on-chip optical and electronic circuits.

In this talk, I will show how optical nanocavities, by localizing
light into sub-cubic optical wavelength volumes with long photon
storage times, can greatly enhance the efficiency of nonlinear
frequency conversion processes in III-V semiconductors, while
simultaneously shrinking the device footprint, reducing the operating
power, and providing a scalable on-chip platform. This approach also
enables on-chip quantum frequency conversion interfaces, which are
crucial for the construction of quantum networks. I will first
describe how photonic crystal nanocavities in gallium phosphide can
generate second harmonic radiation with only nanowatts of coupled
optical powers, and efficiency many orders of magnitude greater than
in previous nanoscale devices. We extend this approach to demonstrate
sum-frequency generation in GaP photonic crystal cavities with
multiple cavity modes, as well as broadband upconversion employing
photonic crystal waveguides. I will then discuss how we can integrate
nanocavity-enhanced second harmonic generation with a single quantum
dot to create a single photon source triggered at 300 MHz by a
telecommunication wavelength laser coupled with an external
electro-optic modulator, a simpler and faster configuration than
standard approaches. Finally, I will present the design and
characterization of multi-resonant photonic crystal nanocavities with
large frequency separation that can further reduce the powers of all
of the aforementioned processes.

MSE PhD Dissertation Defense: Marika Gunji (Mon January 30th, 2PM)

2012-01-16T12:42:00.001-08:00

Nanostructured SiGe and Ge for Future Electronic Devices

Marika Gunji

Department of Materials Science and Engineering

Advisor: Prof. Paul C. McIntyre

Monday January 30^th 2012, 2PM (Refreshments at 1:45PM)

Location: CIS-X 101 Allen Auditorium

(http://cis.stanford.edu/directions/)

As the packing density of silicon (Si) integrated circuits (IC) increases, scaling requirements are becoming severe. Two approaches are considered to be effective to continue dimensional scaling. One is to alter the device layer so that it is a semiconductor other than silicon. Silicon-germanium (SiGe) and germanium (Ge) are suitable candidates because of their greater carrier mobilities than Si and their process compatibility with Si substrates. Another approach is to change the device or circuit structures so that there is less power consumption and better performance for higher device packing densities in ICs. Nanoscale structures such as ultra-thin semiconductor-on-insulators or nanowires can be incorporated in future transistors.

The presentation will focus initially on synthesis of highly compressively strained SiGe-on-insulator (SGOI) substrate fabrication. The strain relaxation mechanisms in highly compressively-strained (0.67% ~ 2.33% biaxial strain), thin SGOI structures with Ge atomic fraction ranging from 0.18 to 0.81 will be described. SGOI layers (8.7 nm ~ 75 nm thickness) were fabricated by selective oxidization of Si from compressively strained SiGe films epitaxially grown on single crystalline Si-on-insulator (SOI) layers. After high temperature oxidation annealing, ~ 30% of the observed strain relaxation can be attributed to formation of intrinsic SFs and the remaining strain relaxation to stress-driven buckling of the SiGe layers.

The presentation will also discuss the path to obtain higher-k dielectrics on Ge metal-oxide-semiconductor (MOS) devices. To obtain high gate capacitance density dielectrics on high-mobility Ge channels, one solution is to interpose a large energy band gap (E_g) insulator with moderate k as an interface layer between a higher-k dielectric and the channel, since higher-k dielectrics tend to have small E_g. Al₂O₃ layers (k ~ 8) can have stable interfaces with Ge and a large band gap. On the other hand, TiO₂ can achieve a much higher k value (~ 60) when in the rutile crystalline phase, but its conduction band offset with Ge is less than 1 eV. TiO₂/Al₂O₃ bilayers deposited on Ge(100) by ALD can achieve low interface trap density with small leakage current after post-metal forming gas anneal. From measurements performed on MOS capacitors, the maximum capacitance at a given frequency increases after the 450 °C forming gas anneal, indicating that the dielectric constant of TiO₂ increased to ~50 after annealing. Consistent with these results, TEM datae indicate that the ALD-grown TiO₂ phase had predominantly transformed to the rutile phase after annealing.

In order to measure the channel transfer characteristics for this TiO₂ (7.5 nm)/Al₂O₃ (2.5 nm)/Ge(100) stack, pMOSFETs with long channels (L_g = 2 – 30 um) were fabricated. The devices show a subthreshold swing of 115 mV/dec and an on-state current of 60 mA/mm. Measured peak hole mobility reaches 370 cm²/Vs, which suggests the feasibility and potential of TiO₂/Al₂O₃/Ge gate stacks for high performance MOSFETs.

--
---------------------------------
Marika Gunji

PhD Candidate
McIntyre Group
Department of Materials Science and Engineering
Stanford University
E-mail: gunjim@stanford.edu

LEdit Macro Examples?

2012-01-15T17:17:00.001-08:00

Hi all,
I'm trying to use a macro to create a layout in LEdit. I was wondering if anyone had any example macros they could share with me.
Thanks,
Chris

transparent conductive substrate

2012-01-14T18:19:00.001-08:00

Hi All,
I need a transparent conductive substrate/film/cable/tape, something like Si wafer or Copper tape but need to be transparent and have good conductivity. Anyone have any idea anything like that and I can readily buy?
Also I try to deposite Au on glass slide but the conductivity is low. Any one have better idea of how to do that? Thanks!

Best,
Xi

NNIN computing facility

2012-01-12T14:12:00.000-08:00

All

This is a great resource. please contact Zhiyong for more info.

Art

---------- Forwarded message ----------
From: Zhiyong Zhang
Date: Thursday, January 12, 2012
Subject: NNIN computing facility
To: Artit Wangperawong <artitw@stanford.edu>

Artit,

Stanford is one of the sites of NNIN with computing capabilities. NNIN provides facilities for academic and industrial users. We here at Stanford have a cluster with 512 cores and a large range of software packages, including various ab inito packages such as QMC and various DFT packages. Here is some simple description of the facility at Stanford, http://www.stanford.edu/group/nnin-computing/ and at other sites which have the computing facilities, http://www.nnin.org/nnin_compsim.html. You can also install your own software for your simulations and use the cluster for development purposes.

If you need to access the cluster for your simulations I will be happy to set it up for you. Also if you know of anybody who could benefit from using the cluster, please feel free to pass the word to them also.

Best,

Zhiyong

Fwd: J.A. Woollam WVASE32 Short Course

2012-01-12T13:26:00.001-08:00

Please contact Veronica Cockerill at JA Woollam if you are interested in attending.

-------- Original Message --------

Subject:	J.A. Woollam WVASE32 Short Course
Date:	Thu, 12 Jan 2012 14:41:30 -0600
From:	Veronica Cockerill <vcockerill@jawoollam.com>
To:	WoollamMailList@jawoollam.com

Dear J.A. Woollam Customers,

We would like to invite those of you who use our WVASE32 software to the next WVASE32 Data Analysis Fundamentals Short Course. It will be held March 6-9, 2012 at the University of North Carolina Charlotte. I have attached a course description and registration form. If you would like to attend, please fill out the registration form completely and fax or email to me by February 24, 2012. Once I receive your registration form, I will send a confirmation email.

This course will focus on data analysis methods for spectroscopic ellipsometry, using WVASE32 software, with a significant amount of "hands-on" computer time. For this reason, participants should be familiar with WVASE32 software.

NOTE: Many of you use our other data analysis software, CompleteEASE. A course dedicated to WVASE32 will not be of benefit to you if you use CompleteEASE. They are two completely different programs. The next CompleteEASE short course has not been scheduled yet. Once it is, I will notify you of that course. Thank you for your patience.

If you have any questions, please let me know.

Best regards,
Veronica

--

*******************************
Veronica Cockerill
Marketing Coordinator
J. A. Woollam Co., Inc.
645 M Street, Suite 102
Lincoln, NE 68508
vcockerill@jawoollam.com
Phone: (402)477-7501 x101
Fax: (402)477-8214

CVD seminars during Winter Quarter

2012-01-03T12:10:00.001-08:00

During the Winter Quarter on Tuesdays at 1:30 pm (except for February 21), I plan to give a series of informal talks on CVD - including epi. The talks will be based on fairly old material, but might provide some useful background for those using or interested in CVD.

The first talk will be on Tuesday, January 10, starting at 1:30 pm, in Allen - 338X.

A (perhaps somewhat overly ambitious) outline based on a previous short course is attached.

Ted

Re: critical point dryer

2011-12-28T10:16:00.001-08:00

Joo Yong:

If you are asking for who has a critical point dryer in the Bay Area,
I'm pretty certain that our friends at UC Berkeley have a Tousimis unit
that is very similar to ours.

Let me know if you need contact information over there.

Thanks,

John

On 12/27/2011 10:31 PM, Joo Yong Sim wrote:
> Dear SNF users,
>
> I was wondering if anyone had experience in a critical point dryer
> outside of SNF.
>
> If anyone could give me any advice, I would appreciate it.
>
> Thanks,
>
> Joo Yong

Critical Point Drying

2011-12-28T08:18:00.000-08:00

Hello Joo,

I have very little experience in critical point drying but here is
what I have learned this fall doing CPD.

(1) Do a trial run with your system first to know you can control the
temp of the water jacket accurately. This is important for maintaining
both temp and pressure, which can effect end results.

(2) Always try to let your gels sit overnight, and if possible in an
oven near 40-60 degrees C, to thoroughly form any bonds that are
available and complete the gelation.

(3) Depending on the gel your trying to dry, it may require several
hours of ethanol soaking to replace the water. I have learned that
many times it is necessary to move up in EtOH concentration in step
changes, starting near 10-20% and moving up to 200 proof. this could
take 2 or 3 days.

This may apply more to my system than your own and only some of my
gels have been successful, they have alot of glycerol in them, but
this is what I have learned thus far. I hope it helps.

-Travis

critical point dryer

2011-12-27T22:31:00.000-08:00

Dear SNF users,

I was wondering if anyone had experience in a critical point dryer outside of SNF.

If anyone could give me any advice, I would appreciate it.

Thanks,

Joo Yong

Cr sputtering

2011-12-23T10:48:00.001-08:00

Dear SNF users,

I was wondering if anyone had experience in depositing chromium by magnetron sputtering and could offer some advice on how to produce smooth homogenous films.

I'll provide some TEM images and deposition conditions if anyone could offer help on how to improve the films.

Regards,

Patrick

Solder Wick/Copper Braid

2011-12-17T07:56:00.001-08:00

Hi Folks,

Does anyone happen to have some Solder Wick I can use later this morning (say around 10:30AM or 11:00AM)?

Thank you,

Vijay

thick su8

2011-12-15T14:32:00.000-08:00

Hello Labmembers,
Hope everyone is enjoying their first days of freedom!
I was wondering if anyone has experience with oober-doober thick su8 layers? I'm talking on the orders of 250um to 1mm...
Any information/ experience you can pass on to me would be very helpful.
Thanks, and hope you enjoy your break,
Max Shulaker

Shutdown stsetch SNF 2011-12-14 17:05:25: Scheduled shutdown

2011-12-14T17:05:00.001-08:00

Renovation Countdown: 24 hours!

2011-12-13T17:01:00.001-08:00

Dear labmembers --

All tools will be shutdown by Wed. afternoon. Most analytical tools
will be removed from the lab as well. At 5 pm the lab will officially
close for business. Thanks all, for cleaning up!

And see you next year -- the lab will still look like the same old car,
but will have a shiny new engine underneath --

Happy Holidays --

Your SNF Staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Found USB Stick in Gowning Room

2011-12-13T16:12:00.001-08:00

Dear All,

A staff member found a USB stick in the gowning room. If it’s yours please come by and describe it because it’s somewhat unique. I’m in cubicle #41 on the first floor of the Allen Building.

Maureen

EE412 Final Presentations - Now!

2011-12-13T15:53:00.001-08:00

Hi all --

Come by for pizza and a chance to hear what some of your labmates have
been up to... EE412 presentations in just a few minutes, in the Annex
Auditorium!

Mary

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Reminder: EE412 Final Presentations TODAY, 4 pm, Annex Auditorium

2011-12-13T14:41:00.001-08:00

Dear Labmembers --

We are wrapping up another term -- and another session of EE412. Final
presentations will be given on Tuesday, Dec. 13, starting at 4 pm in the
AllenX Auditorium. Please come and see what your fellow labmates have
been up to. And be inspired to sign up for Spring term (when there will
be even more new tools to characterize!)

The agenda is as follows:

3:40-4:00 -- Pizza

4:00-4:10 -- A few words from our Instructors

4:10-4:35 -- Shane Crippen: Characterizing the Innotec for Sidewall
Electrodes Using Shadow Mask.

4:35-5:00 -- Tom Gwinn: Developing an Anisotropic Plasma Etch Process
for Thick Tungsten in the P5000

5:00-6:00 -- Insun Park, Young Ik Sohn, and Joo Yong Sim:
Characterization of Fiji ALD Film Quality and Conformality in High
Aspect Ratio/Deep Etched Structures

Check out what previous sessions of EE412 have accomplished by going to
the SNF wiki at:https://snf.stanford.edu/SNF/processes/ee412/

Hope to see you there --

Your EE412 Instructors

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Re: Oxygen/Argon Plasma Ethching

2011-12-13T06:41:00.001-08:00

Orlando,

I think Nanostructures can help you out. They are located in Santa Clara.

http://www.nanostructures.com/

Linda W.

From: "Orlando Trejo" <trejo10@stanford.edu>
To: labmembers@snf.stanford.edu
Sent: Monday, December 12, 2011 1:35:37 PM
Subject: Oxygen/Argon Plasma Ethching

Dear SNF member,

Do you know of an outside source/vendor that can provide oxygen and argon plasma etching services or access to their etchers?

Thank you,

Orlando

--
Orlando Trejo, Ph.D. Candidate
Nanoscale Prototyping Laboratory
Dept. of Mechanical Engineering
Stanford University
npl-web.stanford.edu

Novel material wafer vendors?

2011-12-12T15:50:00.000-08:00

Hi all,
Has anyone had experience purchasing wafers of novel materials (CaF2, ZnSe, ZnS, InP, diamond, etc)? I am looking for vendors and would appreciate any leads.
Cheers,
Ken

EE412 Final Presentations: Tuesday, Dec. 13, 4 pm

2011-12-12T15:38:00.001-08:00

Dear Labmembers --

The agenda is as follows:

3:40-4:00 -- Pizza

4:00-4:10 -- A few words from our Instructors

4:10-4:35 -- Shane Crippen: Characterizing the Innotec for Sidewall
Electrodes Using Shadow Mask.

4:35-5:00 -- Tom Gwinn: Developing an Anisotropic Plasma Etch Process
for Thick Tungsten in the P5000

5:00-6:00 -- Insun Park, Young Ik Sohn, and Joo Yong Sim:
Characterization of Fiji ALD Film Quality and Conformality in High
Aspect Ratio/Deep Etched Structures

Check out what previous sessions of EE412 have accomplished by going to
the SNF wiki at: https://snf.stanford.edu/SNF/processes/ee412/

Hope to see you there --

Your EE412 Instructors

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Oxygen/Argon Plasma Ethching

2011-12-12T13:35:00.000-08:00

Dear SNF member,

Do you know of an outside source/vendor that can provide oxygen and argon plasma etching services or access to their etchers?

Thank you,

Orlando

--
Orlando Trejo, Ph.D. Candidate
Nanoscale Prototyping Laboratory
Dept. of Mechanical Engineering
Stanford University
npl-web.stanford.edu

Lab Update, 12/11 11 am

2011-12-11T11:13:00.001-08:00

Dear labmembers --

Process cooling water is back on. Maintenance crew is working in the
lab to bring tools up. Here's a summary:

- Work is being done on the network. Sunray Coral is fine (internal
network.) Access to remote Coral and SNF emails may be spotty.
- ASML, innotec, metalica, gryphon so far look on track to be up soon.
ETA is around 1 pm. (Thanks Gary & Jim).
- Amtetcher is down hard; heat exchanger pump didn't survive.
P5000etch, mrc, and lampoly are up or nearly so. Stsetch2 is getting
there (Thanks Cesar!)

Many thanks also to Tony Padilla, the Facilities tech who came in both
last night and this morning to check on the water.

Mary

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Cooling water update

2011-12-10T23:27:00.001-08:00

Dear labmembers --

The campus cooling water system is still being repaired. We've been
told it may be a few more hours. The campus cooling loop tempers the
building and lab air, so you will have noticed the lab getting quite
warm. Our building loop is cooled by the campus loop; we are now
running equipment using city water in the building loop. The
temperature is better now, but the pressure is much lower than most
tools would like, so some new equipment errors may arise.

The high water temperature appears to have caused our building loop to
spring a few significant leaks in the basement. So, there are concerns
that pressurizing our building loop may result in a flood. We are
scheduling additional Facilities and SNF staff in on Sunday morning to
be on-hand when the building loop is turned back on.

In short, tools with process cooling water problems will remain down for
the evening. We hope to be in a good position to restart tools in the
morning. Our apologies for the inconvenience, especially coming so
close to the shutdown. Please have patience as we all work through this.

Your SNF staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

5:00 pm - Cooling water problem in the lab

2011-12-10T17:08:00.001-08:00

Dear labmembers --

We've just been informed that there's a cooling water problem throughout
the campus. There is flow, but the temperature is high. It is also
possible that there are irregularities in flow. Tools using cooling
water will not function if temperature and flow are not within certain
limits and will stop processing. Facilities believes the problem will
be resolved within a couple of hours. In the meantime, we have several
reports of tools with turbo and RF failure. The ASML will not reboot.
These are all likely due to the cooling water problem. Once the water
is brought back into spec, most tools will reset themselves. In the
meantime, please do not override or clear errors, or reboot tools that
make use of cooling water -- the tools are protecting themselves.

Thanks,

Your SNF staff

we have developers

2011-12-09T14:00:00.001-08:00

Hi all,

All the canisters are full and we should be just fine for manual
development as well.

happy processing
litho team

Non standard chemicals

2011-12-09T10:37:00.001-08:00

Hello all,

I know that every day you are bombarded with emails, so here is one more.
please help me

to some what clean up the small bottles of non-standard chemicals.

Please check the yellow flammable cabinet in the back and get rid of chemicals that
are expired and you do not want . This will include chemicals in the refrigerator and the freezer.

As you know, we will lose electricity for 3 days so if you have a way of moving your chemicals
to your own lab that would be very wise.

mahnaz

Does anyone have some spin-on glass to spare?

2011-12-08T22:19:00.001-08:00

Hi there,

We would like to try spin-on glass in our project and would like to know
if anyone would be kind enough to share a little spin-on glass with us.
We just need a little to spin one or two small chips. This SOG should
be SILICATE BASED only.

Thank you for your attention.

Ben Jian
Cell: 408-515-2783

Pls Remove Personal Items by 12/12 am

2011-12-08T18:40:00.001-08:00

Hi all --

We've been asked: what time do lab bins need to be emptied? Please
clear items by noon Monday (Dec. 12). We know you're working hard to
get as much done as possible before the extended shutdown. Staff,
however, are stretching to get everything buttoned up before shutdown.
Please help by collecting and storing your belongings in a safe place.

Thanks,

Your SNF Staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Re: Bake Sale update

2011-12-08T15:55:00.000-08:00

My pleasure. Together we thrive. Jasmine, thanks too for organizing and seeing it to the end. Be blessed to bless.
Hulda
Sent on the Sprint® Now Network from my BlackBerry®

-----Original Message-----
From: Jasmine Hasi <jazz9152@slac.stanford.edu>
Date: Wed, 7 Dec 2011 23:54:20
To: <mbaran@stanford.edu>
Cc: <labmembers@snf.stanford.edu>; <cis-building@cis.stanford.edu>; <huldamuaka@hotmail.com>; <nlsmee@usfca.edu>; <smee@speakeasy.net>; <muchemu@gmail.com>; <akamau2@hotmail.com>
Subject: Bake Sale update

Dear All,

I want to say a huge thank you for everyone who bought goodies at the
bake sale or made a donation. We made a staggering $365...Wohoooo!

All the proceeds will be going directly to Insight World Aid.

insightworldaid.org

I have cc'ed Nancy Smee who is one of the Board of Directors volunteering
for Insight, if you have any questions or interested to get involved.

In addition, I want to thank the amazing chefs who worked hard to make
this sale possible. A huge thank you to Maureen B, Hulda, Margaret,
Njoki, Mahnaz, Astrid, Uli, and Nancy for helping and working behind
the scenes.

Thank you all once again for your support and making this possible :)

Wish you all a Happy Holidays and a great start to the New year.

Jasmine

we will get more Developer

2011-12-08T15:28:00.001-08:00

All,

Try to make it through to night, Gary and Mario just added the last
bottles of developers to
canisters. we ordered 4 cases of developer, that is equivalent to 16
more gallons.

We have been told that we will get it by tomorrow morning ( thanks to
David, begging).

We have used 34 gallons of developer since last week.
Slow down people.

mahnaz

Renovation Countdown: 7 days!!

2011-12-07T23:18:00.001-08:00

Hi all --

The critical permits have been approved so construction is officially
underway. The permit approvals were one of the key risk factors in this
project, so things are moving well and are on schedule.

Just a few reminders:

1. Make sure to remove all your personal items from the lab. ALL of
them. Remove them from bins, from WIP racks, from shared storage. If
someone you know isn't aware of this, please make sure they are informed
-- we will be losing about 1/3 of the bins in the lab to make way for
new equipment and stockroom supplies, so we will be revamping the lab
bin process. To start fresh, everyone will need to clear out all the
bins -- and rollarounds, and shelves, etc. Any personal items left in
the lab will be removed by Staff. We will store the items but please
understand we can't be responsible for possible loss or damage.

2. The last day the lab is open is Wednesday, 12/14/11. Because we
have to make the lab safe for construction, many tools will be brought
down before this date, as toxic gas lines need to be purged, wet bench
drains need to be flushed, all small tools will be removed from the
lab. A schedule for individual tool shutdowns has been posted to the
SNF website -- but be aware that dates may change as we get nearer to
the time. Please refer to the schedule, but check on Coral for details.

Finally, thank you for your patience -- we realize this renovation is
inconvenient for you all -- meaning your help and cooperation are that
much more appreciated --

Thanks again -

Your SNF Staff

Re: Problem stsetch SNF 2011-12-04 10:43:32: cannot start etch process

2011-12-07T17:00:00.005-08:00

archived

Re: Comment stsetch SNF 2011-11-01 16:00:43: Nov qual

2011-12-07T17:00:00.003-08:00

archived

Re: Comment stsetch SNF 2011-09-04 21:32:02: DO NOT RESET THE TOOL

2011-12-07T17:00:00.001-08:00

archived

Re: Comment stsetch SNF 2011-05-11 15:15:04: Update high leak rate

2011-12-07T16:59:00.001-08:00

archived

Bake Sale update

2011-12-07T15:54:00.001-08:00

Dear All,

I want to say a huge thank you for everyone who bought goodies at the
bake sale or made a donation. We made a staggering $365...Wohoooo!

All the proceeds will be going directly to Insight World Aid.

insightworldaid.org

I have cc'ed Nancy Smee who is one of the Board of Directors volunteering
for Insight, if you have any questions or interested to get involved.

Thank you all once again for your support and making this possible :)

Wish you all a Happy Holidays and a great start to the New year.

Jasmine

Bake Sale Continues AT 12:15 - 1:00P in the Break Room of the Allen Building

2011-12-07T10:07:00.001-08:00

Dear All,

Thank you so much for all your support with the Bake Sale yesterday. We still have some GREAT bake items left. We will be selling them today from 12:15 – 1:00P in the Break Room of the Allen Building.

Please stop by and see what we have left. All cookies will be $1.00 per packet.

Sincerely,

Maureen

Problem stsetch SNF 2011-12-06 23:30:59: Load arm movement is sluggish

2011-12-06T23:30:00.000-08:00

It stops intermittently

Venture Clinic, Fri, 12/9, 2:30 pm, Allen 201 (Note room!)

2011-12-06T11:09:00.001-08:00

Dear labmembers -

With the lab shutdown, it may be a good time to give some thought
to.... starting your own company! If you are interested in learning
about the whole mysterious business of venture capital, Gavin McCraley
(Morrison & Foerster) and Shahin Farschi (Lux Capital) will be hosting a
clinic to answer your questions.

The Venture Clinic will be Friday, Dec. 9, starting at 2:30 pm in Allen
201 (note the room change.)

Contact info for our guest hosts:

Shahin Farshchi, Ph.D.
http://www.luxcapital.com
C: 925.323.2784

and

Gavin McCraley
Morrison& Foerster LLP
Direct: 650-813-4105
gmccraley@mofo.com

Re: vendors for ITO film coating

2011-12-06T10:56:00.000-08:00

Hi
http://www.advancedfilmservices.com/

Here is the web site for advanced film Services....they do a good job

Kathy

From: "KONG DESHENG" <desheng@stanford.edu>
To: labmembers@snf.stanford.edu
Sent: Monday, December 5, 2011 11:17:29 PM
Subject: vendors for ITO film coating

Hi All,

I am looking for a vendor to do ITO film coating on customer-supplied substrates.
We'll use the film as transparent conductors.

If you know some companies that provide these services, could you let me know about it?

Thank you in advance,
--
Desheng Kong

Member of Prof. Yi Cui's Group,
PhD Candidate,
Department of Materials Science and Engineering,
Stanford University

BAKE SALE AT 10:00A in Office 145 (Nancy Latta's Office ) in the Allen Building

2011-12-06T10:16:00.000-08:00

Come one, come all to our Bake Sale. It starts at 10:00A and will go until 1:00P. Please come buy something for your coffee break or your Lunch or for your family or

All OF THE ABOVE!!!!!!!!!!!!!

It is for a great cause – Insight World Aid – insightworldaid.org

Maureen

Labmember Lost Keys on Saturday

2011-12-06T09:44:00.001-08:00

Dear All,

One of SNF’s Lab members lost her keys on Saturday. This set of keys has a pink and green rubberized turtle attach to them. If you find them please drop them off with me. I am in cubicle #41 on the first floor of the Allen Building.

Thank you,

Maureen

Re: vendors for ITO film coating

2011-12-06T09:13:00.000-08:00

Try Advanced Film. These companies charge by the lot, so make sure you have enough samples.

On Monday, December 5, 2011, KONG DESHENG <desheng@stanford.edu> wrote:
> Hi All,
>
> I am looking for a vendor to do ITO film coating on customer-supplied substrates.
> We'll use the film as transparent conductors.
>
> If you know some companies that provide these services, could you let me know about it?
>
>
> Thank you in advance,
> --
> Desheng Kong
>
> Member of Prof. Yi Cui's Group,
> PhD Candidate,
> Department of Materials Science and Engineering,
> Stanford University
>
>

Problem stsetch SNF 2011-12-06 06:11:22: compressed air fault

2011-12-06T06:11:00.001-08:00

Another compressed air fault. System won't allow unloading wafer.

vendors for ITO film coating

2011-12-05T23:17:00.000-08:00

Hi All,

I am looking for a vendor to do ITO film coating on customer-supplied substrates.
We'll use the film as transparent conductors.

If you know some companies that provide these services, could you let me know about it?

Thank you in advance,
--
Desheng Kong

Member of Prof. Yi Cui's Group,
PhD Candidate,
Department of Materials Science and Engineering,
Stanford University

Re: Don't Forget the Bake Sale tomorrow from 8:00 to 1:00

2011-12-05T17:01:00.001-08:00

correction..It will start at 10am.

Thanks Maureen for sending this out as a reminder.

On Mon, 5 Dec 2011, Maureen Baran wrote:

> Dear All,
>
>
>
> Please don't forget the bake sale tomorrow in Nancy Latta's office, #145 on
> the first floor of the Allen Building. It will run from 8:00A to 1:00P.
> It's for a good cause.
>
>
>
> Thank you,
>
>
>
> Maureen
>
>

Don't Forget the Bake Sale tomorrow from 8:00 to 1:00

2011-12-05T16:36:00.001-08:00

Dear All,

Please don’t forget the bake sale tomorrow in Nancy Latta’s office, #145 on the first floor of the Allen Building. It will run from 8:00A to 1:00P. It’s for a good cause.

Thank you,

Maureen

Re: Shutdown stsetch SNF 2011-12-05 11:06:20: Compressed Air Fault

2011-12-05T12:23:00.001-08:00

Reset the system. Ran DEEP recipe with no problems.

found a cell phone

2011-12-05T11:16:00.001-08:00

Hello

Found a Nokia phone on the couch out side of my office, come and claim it.

mahnaz

Shutdown stsetch SNF 2011-12-05 11:06:20: Compressed Air Fault

2011-12-05T11:06:00.001-08:00

Ran DEEP process. After 70 min, there was a compressed air fault, but I didn't come back to find it until after 105 min. Cleared fault alarm, but it happened again. Cleared fault again, retreived wafer. Was advised to shut tool down.

Fwd: Imina Technologies miBots Nanomanipulation Workshop

2011-12-05T10:14:00.001-08:00

Starting now...

-------- Original Message --------

Subject:	Imina Technologies miBots Nanomanipulation Workshop
Date:	Wed, 16 Nov 2011 10:39:39 -0800
From:	Ed Myers <edmyers@stanford.edu>
To:	labmembers@snf.stanford.edu
CC:	tomlevesque424@gmail.com, dankleinen@aol.com

The SNF Staff in conjunction with Imina Technologies is pleased to present: NANOMANIPULATION WORKSHOP Monday December 5, 2011 The miBots™ are coming! Do you have a need for manipulation or sensing small samples in a microscope? If so, we invite you to see these novel nanopositioners for yourself at the Stanford NanoFabrication Facility in a FREE, hands-on workshop on December 5th in the Paul Allen Building, Auditorium Room 101X. Designed especially for light microscopy, SEMs and FIBs, these affordable, easy-to-use mini robots are virtually untethered and free to move independently, opening new vistas for manipulation and testing at the macro, micro, or nanoscale. Working individually or in groups, the miBot™ uses a variety of tools such as grippers, probes, and optical fibers so that, in addition to manipulating the sample, they can illuminate a nano workspace and conduct force or electrical measurements. Robust, mechanically and thermally stable, and vacuum-ready, these tiny trojans are a great, customizable solution for maneuvering and testing cells, nanostructures, semiconductor devices, LEDs, and MEMs. miBots will be working in the Paul Allen Building, Auditorium Room 101X from 10 AM till Noon. For more information, or to register for workshop, click here http://imina.ch/events/registration-form-workshops-california-december-2011. Imina will contact you in the week before the workshop to confirm and provide a map and directions. Want to learn more? Visit us at www.imina.ch or give Tom Levesque a call at (972) 318-0196. Regards, SNF Staff

Comment stsetch SNF 2011-12-04 18:47:59: Turbo Pump

2011-12-04T18:47:00.000-08:00

The turbo pump shutoff, re-start tubro ..

Problem stsetch SNF 2011-12-04 18:34:24: loading arm was stuck temporarily

2011-12-04T18:34:00.001-08:00

While loading a wafer, the loading arm became stuck temporarily before loading the wafer. Not sure if this was a one time occurrence.

Problem stsetch SNF 2011-12-04 10:43:32: cannot start etch process

2011-12-04T10:43:00.001-08:00

after loading the wafer, the process is stuck at the "standby" stage, aparently waiting for the turbo to reach speed. Tried several times and was never able to start etch process.

Comment stsetch SNF 2011-12-02 21:54:06: wafer loading speed: rectificative

2011-12-02T21:54:00.001-08:00

The unloading is also slow, still for the "entry" phase, not for the return.
The frequence of this "problem" is more for one move over two.

Comment stsetch SNF 2011-12-02 20:17:41: wafer loading is often very slow

2011-12-02T20:17:00.001-08:00

The wafer loading arm is often (about one time over four) slowing and sometimes stopping during the "entry" phase.
It is not a real problem but it slows a little bit more a usually long work...
Wafer unloading and return of the arm to its "normal" position are still performed at a normal speed.

New vacuum sealer

2011-12-02T14:31:00.001-08:00

Hi all,

SNF has purchased a new vacuum sealer in hope of eliminating some of
the pain of bagging all the wafer boxes and masks.

The new tool is on the table close to EPI for now, this will be
temporary.

I wrote a quick instruction and is taped to the table, add to it if I
have missed anything.

The bags are in a blue tray and bigger so two box of wafers can be
sealed easily. please note that bags are special order and should not
be used for other things.

mahnaz

Party delayed to 1:30

2011-12-02T12:57:00.001-08:00

Hello all,

Party will start at 1:30 due to delay on refreshment delivery.

mahnaz

HF vapor etchers, clean and gold contaminated

2011-12-02T04:18:00.001-08:00

They will be drained, rinsed and turned off for the shutdown on MON morning 12/12.

The last day to use them will be SUN night, 12/11.

Please plan accordingly.

Thanks - Gary

Seeking Associate Director of Nano Center

2011-12-02T01:12:00.000-08:00

Dear Colleagues,
We are advertising for a new Associate Director forthe remaining
nearly 3 years of Stanford's NSF-funded Center forProbing the
Nanoscale (and likely for some or all of the following year,during a
no-cost extension of the grant). The position, which involvesboth
scientific coordination and educational activities,is now posted on
the Stanford job website (jobs.stanford.edu) with jobID#45577. If you
are interested after reading the job description,please consider
applying.
Also, if you know someone whom you think would be a goodcandidate, I
encourage you to bring this opportunity to theirattention. We will
begin reviewing applications in early December.
Best wishes,David Goldhaber-GordonAssociate Professor of
PhysicsDirector, Center for Probing the Nanoscale,an NSF Nanoscale
Science and Engineering Center
P.S. CPN's former Associate Director Dr. Tobi Beetz, whom some of you
may know,has accepted the position of Associate Director of Stanford
Nano Center andStanford Nanocharacterization Lab shared facilities. We
wish him well inhis exciting and challenging new role.

--
-----------------------------------------------------------------
David Goldhaber-Gordon goldhaber-gordon@stanford.edu
Associate Professor of Physics davidg@post.harvard.edu
and Director,
(permanent forwarding)
Center for Probing the Nanoscale
Stanford University
www.stanford.edu/group/cpn/
(650) 725-2047 (lab) (650) 724-3709 (office)

Address for letters or packages: Administrative Associate:
David Goldhaber-Gordon    Roberta Edwards
Geballe Laboratory for Advanced Materials    McCullough, Rm. 338
McCullough Building, Room 346 Phone: (650) 723-8028
476 Lomita Mall    Fax: (650) 724-3681
Stanford, CA 94305-4045 email:
redward@stanford.edu

Reminder: Annual Building Party Friday @ 1

2011-12-01T10:40:00.001-08:00

Just a reminder of the Annual Building Party! It's Friday (tomorrow!) Dec. 2, from 1-3 pm. This will be in the Allen building, just outside the yellow window area of the lab. Enjoy snacks, traditional games (the famous "wafer toss"), create your own silicon wafer ornament, and just spend some time reconnecting before heading off for the holidays. Stop on by for an afternoon break (generously sponsored by the CIS Affiliates.)   Your CIS party committee

new fiji ald system brought into the snf this am

2011-11-30T09:19:00.000-08:00

with assistance from mike dickey, scott lee, and chaitanya gupta we got the new fiji3 ald system into the snf this morning. you will see it sitting by the epi2. it is still on its moving wheels to accommodate easy positioning, so note that it is not anchored down yet. we expect this tool to be outfitted and come online in the spring of 2012 to complement the other ald systems by providing more ald (plasma or thermal) of oxides with an open cleanliness classification similar to fiji2.

j

Bake Sale for a Good Cause - Here in the Allen Building

2011-11-29T17:12:00.001-08:00

www.insightworldaid.org

What: BAKE SALE…I know what you’re thinking wow, when the last time we had a bake sale. We were thinking the same thing so; we decided to have a bake sale.

Who: Friends of SNF are putting together this incredible eatable bake sale

When: Tuesday, December 6^th from 8:00A to 1:00P

Why: Because this is the season to do good things for those less fortunate

Where: Nancy Latta’s Office #145 on the first floor of the Allen Building

Please come by and support your SNF Staff and Friends and purchase often through the morning and lunch hour.

Sincerely,

Maureen

On behalf of the SNF Staff and Friends of SNF

Annual Holiday Party! Friday, Dec. 2, 1-3 pm

2011-11-29T08:45:00.001-08:00

Greetings!

You are invited to the annual Allen Building holiday party, this Friday, Dec. 2, from 1-3 pm.
This will be in the Allen building, just outside the yellow window area of the lab.
Enjoy snacks, traditional games (the famous "wafer toss"), create your own silicon wafer
ornament, and just spend some time reconnecting before heading off for the holidays.
Stop on by for an afternoon break (generously sponsored by the CIS Affiliates.)

Your CIS party committee

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Tool Shutdown Schedule

2011-11-28T16:48:00.001-08:00

Dear labmembers --

Renovation Countdown: 16 days!

As you know, the lab becomes a construction zone starting Thursday, Dec.
15. In preparation for construction, staff will need to ensure that all
equipment is safe (all toxic gases are purged from tools and process
lines, wet benches decontaminated) and ready for an extended shutdown
(chambers cleaned, pumps PM'ed, etc.) Also, all small tools, like
microscopes, will be removed from the lab. With over 100 tools in the
lab, we'll need to stage all these activities to ensure a smooth,
on-time handover. Attached is the current plan for tool shutdown.
Hopefully, this will help in your planning for any activities in
December -- please be aware this schedule is subject to change, but that
any changes will be communicated via regular updates and on Coral.

Thanks for your patience as we ramp up our shutdown plans.

Your SNF Staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

Re: Problem stsetch SNF 2011-11-26 00:48:15: communication lost

2011-11-28T09:05:00.003-08:00

Another user was able to reset communication. Ran a process without any problems.

Re: Problem stsetch SNF 2011-11-26 13:11:55: communication problem still present

2011-11-28T09:05:00.001-08:00

Another user was able to reset communication. Ran a process without any problems.

Re: Shutdown stsetch SNF 2011-11-27 08:28:56: Blown CDA line ...

2011-11-27T09:20:00.001-08:00

Replaced blown CDA line with a nitrogen line run in blue parflex from the nearest nitrogen house supply to the pump rack and electronic box for stsetch.
This does three things:
1. Fixes an error that likely occurred 20 years ago: the pump and cabinet purge should have always been connected to house nitrogen instead of to CDA.
2. It fixes the blown line.
3. It gets rid of the CDA usage close to the epi burn box. AGC will be removing that on Monday and needed that line moved anyhow.
Note: I think that it would be worthwhile to find something better than Parflex for flexible connections for house nitrogen, CDA, and various water lines. This stuff always breaks. There must be a more reliable material.
Thanks,
John

Shutdown stsetch SNF 2011-11-27 08:28:56: Blown CDA line ...

2011-11-27T08:28:00.001-08:00

The CDA line in the basement, that should be the house nitrogen line, has blown and is making a loud noise.
After confirming with the handheld oxygen meter (so that I didn't because a casaulty) that it was CDA and not nitrogen leaking), I've shut off the valve.
I'm now in the process of connecting this to what it should have been connected ... house nitrogen.
While I'm not proud of using Parflex tubing, it's the only thing that I have available on a Sunday morning.
John

Problem stsetch SNF 2011-11-26 13:11:55: communication problem still present

2011-11-26T13:11:00.001-08:00

The computer is still not able to communicate with the apparatus.
Impossible to unload Mislam's wafer or to do anything.

Problem stsetch SNF 2011-11-26 00:48:15: communication lost

2011-11-26T00:48:00.001-08:00

Could not unload my wafer due to communication error.

Infra-red imaging solutions

2011-11-24T17:06:00.000-08:00

Dear Labmembers,

Happy Thanksgiving!

May I know if anyone has access to an infra-red imaging camera or know
if any such facility exists on campus?

Thanks in advance for any replies!
Ben

--
Benjamin Tee
Ph.D Candidate, Electrical Engineering
Stanford University
Cell: 650-704-4300
M.S (EE) Stanford University '07
B.S.E (EE) University of Michigan - Ann Arbor '06
Bao Research Group - http://baogroup.stanford.edu
Address:
381 North South Mall Rm 209
Stanford CA 94305
USA

Imina Technologies miBots Nanomanipulation Workshop

2011-11-23T14:52:00.000-08:00

All,

While you are resting up over the long weekend, now would be a great
time to sign up for the miBots Workshop.

The SNF Staff in conjunction with Imina Technologies is pleased to present:

NANOMANIPULATION WORKSHOP

Monday December 5, 2011

The miBots™ are coming! Do you have a need for manipulation or sensing
small samples in a microscope? If so, we invite you to see these novel
nanopositioners for yourself at the Stanford NanoFabrication Facility in
a FREE, hands-on workshop on December 5th in the Paul Allen Building,
Auditorium Room 101X. Designed especially for light microscopy, SEMs and
FIBs, these affordable, easy-to-use mini robots are virtually untethered
and free to move independently, opening new vistas for manipulation and
testing at the macro, micro, or nanoscale. Working individually or in
groups, the miBot™ uses a variety of tools such as grippers, probes, and
optical fibers so that, in addition to manipulating the sample, they can
illuminate a nano workspace and conduct force or electrical
measurements. Robust, mechanically and thermally stable, and
vacuum-ready, these tiny trojans are a great, customizable solution for
maneuvering and testing cells, nanostructures, semiconductor devices,
LEDs, and MEMs.

miBots will be working in the Paul Allen Building, Auditorium Room 101X
from 10 AM till Noon.

For more information, or to register for workshop, click here
http://imina.ch/events/registration-form-workshops-california-december-2011.
Imina will contact you in the week before the workshop to confirm and
provide a map and directions.

Want to learn more? Visit us at www.imina.ch or give Tom Levesque a call
at (972) 318-0196.

Regards, SNF Staff

High pressure and High Temp Anneal

2011-11-23T14:26:00.001-08:00

Hi all,

I would like to have some wafers to be annealed in High pressure (>=100bar) and high temperature (1000C-1400C) at N2 ambient, does anyone know any company or institute provide such service?

Your input and comments will be much appreciated.

Wish you all have a great thanksgiving holiday!

Gavin

Renovation countdown: 23 days!

2011-11-22T18:36:00.001-08:00

Dear labmembers --

You may have noticed a number of people walking around the building in
construction helmets and orange vests. Construction is well underway in
the basement and in the area above the lab. Here's a quick update of
activities which may be relevant to your work here.

The former CAD room will soon house the new maintenance office area and
workshop. The ASML emulator and CAD desktops are now located in the
cube area near the Maureen's office. The probe
station/micromanipulator6000 is now located in room 144, near the cube
area (thanks to Andreas for setting it back up and even cleaning the
dust!) These are still available for your use - please remember to
clean up when you are done.

We hand over the keys to the lab to contractors on Thursday, Dec. 15. To
make equipment safe to exist in a construction zone, process gases will
need to be purged, wet benches drained and rinsed, microscopes will be
removed, etc. All this takes time, so tools will be shutdown in the
days leading up to 12/15. We should have a schedule of planned tool
shutdown early next week, to help plan your work in December accordingly.

Please remember to remove all your personal items from bins and WIP
shelves by the morning of Monday, Dec. 12. Items left in the lab will
be removed by staff. (Remember, this will be a construction zone - any
damage to equipment will be covered by liability, but damaged masks and
wafers will not be.) There will be no bin charges in December; bins
will assigned again when the lab reopens.

Lastly, the red lockers can be used for storing personal items, but they
will not be accessible during construction. So anything you leave in
them will have to stay until the lab reopens. We'd like to encourage
you to turn in you locker key if you don't think you will use it.

One more thing -- many thanks to everyone who cleaned up items in the
former CAD room and the cube area -- it helped enormously in staging our
moves. And your understanding and support (which we will need more of
in coming weeks!) are greatly appreciated.

Your SNF Staff

--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
Paul G. Allen Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang@stanford.edu
http://snf.stanford.edu

attending IEDM ?

2011-11-22T11:22:00.001-08:00

Dear Friends and Colleagues,

While attending IEDM over the years (or any big conference for that matter), selecting which papers to attend has been a drudgery. Going back and forth between the conference leaflet and the abstract booklet, and then discovering that their exists an conflict between the papers i wanted to attend and finally loosing the piece of paper with my schedule on the first day of the conference.

This motivated me to create a iPhone/iPad/iPod which will allow the participants to browse the schedule : showing them all the sessions going on at a particular time and then choose one, browse the papers by the category, find which room to go to next to attend the next paper.

The app is live on the Appstore now and you can search for it by typing "IEDM" in the Appstore. Alternatively you can get it use this link : http://itunes.apple.com/us/app/iedm-2011/id478640054?ls=1&mt=8

App Description :
This app allows you to browse through the schedule of IEDM 2011 conference, select the papers you want to attend and make your conference calendar. Browse all the papers being presented at a particular time slot or alternatively browse the papers by conference categories. You can read through the abstract of the papers and select the ones you want to attend to make your conference itinerary. This app also allows you to do a live search over the extended abstracts to quickly narrow all the papers on a particular topic (e.g. Flash Memory) or from a particular institution (e.g. Stanford University).
The App for IEDM 2011 is sponsored by Applied Materials.

Please have fun using the app and let me know of your feedback.

Best Regards,
Aneesh

Re: ion implantation question

2011-11-22T06:43:00.000-08:00

The Innovion website, http://www.innovioncorp.com/Support/ProcessEngineering.aspx, has range statistics and other technical data.

Perhaps ask Innovion if you are not sure. Add some test wafers( bare Si, Oxide / Si, whatever might make sense) if you have only a few device wafers. I think the price is the same up to the load limit.

jimkruger

From: John Shott <shott@stanford.edu>
To: Stephanie Claussen <sclaussen@stanford.edu>
Cc: "labmembers@snf.stanford.edu" <labmembers@snf.stanford.edu>
Sent: Monday, November 21, 2011 6:59 PM
Subject: Re: ion implantation question

Stephanie:

What are the dose and energy of the implant that you plan to do?

To first order, the implant depth in oxide is comparable to that in silicon. As I recall (don't take this as an accurate number) the mean implant depth of 100 keV phosphorus is about 125 nm. However, if you tried to use 125 nm of masking oxide, you'd be in serious trouble because fully half of the dopant would penetrate the oxide. Absent more accurate numbers, I'd suggest that a masking oxide thickness of 2.5 to 3.0 times the mean implant depth in silicon. For 100 keV phosphorus, I'd suggest that about 400 nm of oxide is probably safe. Note: heat treatment following implant also needs to be considered but is often a second order consideration unless post-implant heat treatment is really hot or long.

Let me know if you have other questions or are worried about trusting my now-addled memory about such matters.

John

Sent from my iPhone

On Nov 21, 2011, at 5:04 PM, Stephanie Claussen <sclaussen@stanford.edu> wrote:

> Hi all,
>
> I am planning on doing phosphorous ion implantation this week at INNOViON in San Jose. This will be on an already-fabricated vertical pin structure. I was planning to deposit LPCVD oxide over my entire structure, then pattern and etch it to open up the n regions where I want the ions implanted.
>
> Can anyone tell me how thick this oxide should be to prevent P doping in my p region? Your prompt responses are greatly appreciated, as this is a process I was planning on carrying out over the next day or two.
>
> Thanks so much,
> Stephanie

Re: ion implantation question

2011-11-21T18:59:00.001-08:00

Stephanie:

What are the dose and energy of the implant that you plan to do?

To first order, the implant depth in oxide is comparable to that in silicon. As I recall (don't take this as an accurate number) the mean implant depth of 100 keV phosphorus is about 125 nm. However, if you tried to use 125 nm of masking oxide, you'd be in serious trouble because fully half of the dopant would penetrate the oxide. Absent more accurate numbers, I'd suggest that a masking oxide thickness of 2.5 to 3.0 times the mean implant depth in silicon. For 100 keV phosphorus, I'd suggest that about 400 nm of oxide is probably safe. Note: heat treatment following implant also needs to be considered but is often a second order consideration unless post-implant heat treatment is really hot or long.

Let me know if you have other questions or are worried about trusting my now-addled memory about such matters.

John

Sent from my iPhone

On Nov 21, 2011, at 5:04 PM, Stephanie Claussen <sclaussen@stanford.edu> wrote:

> Hi all,
>
> I am planning on doing phosphorous ion implantation this week at INNOViON in San Jose. This will be on an already-fabricated vertical pin structure. I was planning to deposit LPCVD oxide over my entire structure, then pattern and etch it to open up the n regions where I want the ions implanted.
>
> Can anyone tell me how thick this oxide should be to prevent P doping in my p region? Your prompt responses are greatly appreciated, as this is a process I was planning on carrying out over the next day or two.
>
> Thanks so much,
> Stephanie

ion implantation question

2011-11-21T17:04:00.001-08:00

Hi all,

I am planning on doing phosphorous ion implantation this week at INNOViON in San Jose. This will be on an already-fabricated vertical pin structure. I was planning to deposit LPCVD oxide over my entire structure, then pattern and etch it to open up the n regions where I want the ions implanted.

Can anyone tell me how thick this oxide should be to prevent P doping in my p region? Your prompt responses are greatly appreciated, as this is a process I was planning on carrying out over the next day or two.

Thanks so much,
Stephanie

Re: Comment stsetch SNF 2011-11-15 15:11:48: Unusual observations

2011-11-21T12:08:00.003-08:00

Helium flow is stable at 3.8 (during process) when running a bare silicon wafer. The flow however is unstable when using the carrier. This is normal and is inherent in the design of the carrier.

Re: Comment stsetch SNF 2011-11-17 14:11:09: confirming nharjee above

2011-11-21T12:08:00.001-08:00

Helium flow is stable at 3.8 (during process) when running a bare silicon wafer. The flow however is unstable when using the carrier. This is normal and is inherent in the design of the carrier.

Re: Problem stsetch SNF 2011-11-20 05:58:03: He back flow leak?

2011-11-21T12:07:00.001-08:00

Helium flow is stable at 3.8 (during process) when running a bare silicon wafer. The flow however is unstable when using the carrier. This is normal and is inherent in the design of the carrier.

Found in the Gowning Room Miscellaneous Costume Earrings

2011-11-21T12:03:00.001-08:00

With the cleanup going on in, out and around the lab, a concerned labmember has given me two mismatched non pierced earrings that have been in the gowning room for some time. One has rhinestones and a teardrop pearl and the other is an outline of a bow with a heart on the end of one of the strings.

If either or both are yours, please come by my cubicle to claim.

Thank you,

Maureen

Problem stsetch SNF 2011-11-20 05:58:03: He back flow leak?

2011-11-20T05:58:00.001-08:00

As previous users mentioned, flow rate fluctuates a lot, and after the etching, a weird ring pattern was observed on my wafer. He back flow leaks are suspected...

missing wafers

2011-11-17T15:35:00.001-08:00

Hello all,

me again, I have a labmember totally stressed.
Will you please look around and see if you can find a small box that
contains
Two 6" boxes, one of the box contains 25 wafers and the other box is empty.
There should be a mask in the box as well.

Please if you find it, give it or leave it in front of any staff's or
Maureen's office.

Any help in this matter is much appreciated.

mahnaz

Comment stsetch SNF 2011-11-17 14:11:09: confirming nharjee above

2011-11-17T14:11:00.001-08:00

I'm running DEEP recipe and measured oscillating He flow is between 2.6-5.4. I'm using the Al holder and a backing wafer since I'm etching through more than 100um. Like nharjee, I cleaned the Al holder too.

missing wafers

2011-11-16T14:34:00.001-08:00

Hello all,

A labmember is missing a full box of 6" wafers that was in a cardboard
box along with an empty 6" box on her desk.

The box was sitting on the desk and I saw the box in the morning.
If you have taken the wafers by mistake, please bring it back.

mahnaz